Plasma process is an important part in the application of dry cleaning. With the development of microelectronics technology, the advantages of isohigh child cleaning are more and more obvious. In the process of semiconductor device production, there will be famous particles, metal ions, organic matter and residual abrasive particles on the surface of wafer chip. In order to ensure the integration of the integrated capacitor U and the performance of the device, it is necessary to clean and remove these harmful impurities on the surface of the chip without damaging the surface and electrical characteristics of the chip and other materials used. Otherwise, they will have a fatal impact on chip performance and defects, reduce the qualified rate of products, and restrict the further development of devices. At present, almost every process of device production has the step of cleaning, which aims to remove the dirt and impurities on the surface of the chip. The widely used physical and chemical cleaning methods can be roughly divided into two categories, namely smooth cleaning and dry cleaning. In particular, dry cleaning develops rapidly, among which plasma cleaning has obvious advantages. It has been widely used in the packaging field of semiconductor devices and optoelectronic components.
